Thermal performances of nanoscale-gap
thermophotovoltaic energy conversion devices
M. Francoeur1, M. P. Mengüç*,1,2 and R. Vaillon3
- 1 Radiative Transfer Laboratory, Department of Mechanical Engineering, University of Kentucky, Lexington, KY 40506-0503, USA.
- 2 Özyeğin University, Altunizade, 34662 Istanbul, Turkey.
- 3 Université de Lyon, CNRS, INSA-Lyon, UCBL, CETHIL, UMR5008, F-69621, Villeurbanne, France.
The thermal effects on the performances of In0.18Ga0.82Sb based nanoscale-gap thermophotovoltaic (nano-TPV) energy conversion devices are analyzed via the solution of the coupled near-field thermal radiation, charge and heat transport problem. The results suggest that the performances are quite low due to excessive heating of the p-n junction converting radiation into electricity. This problem could be circumvented by designing nanostructures selectively emitting thermal radiation in the near-field.
- * Corresponding author